absolute maximum ratings symbol parameter value units v ces collector-emitter voltage ( v be = 0 ) 700 v v ceo collector-emitter voltage ( i b = 0 ) 400 v v ebo emitter-base voltage ( i c = 0 ) 9.0 v i c collector current 12.0 a i cp collector pulse current 24.0 a i b base current 6.0 a i bm base peak current ( t p # 5 ms ) 12.0 a p c total dissipation at t c = 25 c 100 w t stg storage temperature - 65 ~ 150 c t j max. operating junction temperature 150 c thermal characteristics symbol parameter value units r jc thermal resistance, junction-to-case 1.67 c/w r ja thermal resistance, junction-to-ambient 62.5 c/w SBP13009-O jul, 2006. rev. 0 1/5 c c features - very high switching speed - minimum lot-to-lot hfe variation - wide reverse bias s.o.a general description this device is designed for high voltage, high speed switching char- acteristic required such as light ing system, switch ing mode power supply. high voltage fast-switching npn power transistor 2.collector 3.emitter 1.base symbol ? ? ? to-220 semiwell semiconductor 1 2 3 copyright@semiwell semiconductor co., ltd., all rights reserved
electrical characteristics ( t c = 25 c unless otherwise noted ) symbol parameter condition min typ max units i cev collector cut-off current ( v be = - 1.5v ) v ce = 700v v ce = 700v t c = 100 c - - 1.0 5.0 ma v ceo(sus) collector-emitter sustaining voltage ( i b = 0 ) i c = 10 ma 400 -- v v ce(sat) collector-emitter saturation voltage i c = 5.0a i b = 1.0a i c = 8.0a i b = 1.6a i c = 12.0a i b = 3.0a - - 0.5 0.6 1.0 v v be(sat) base-emitter saturation voltage i c = 5.0a i b = 1.0a i c = 8.0a i b = 1.6a -- 1.2 1.6 v h fe * dc current gain i c = 5.0a v ce = 5v i c = 8.0a v ce = 5v 10 5 - 40 30 t s t f storage time fall time i c = 8.0a v cc = 125v i b1 = 1.6a i b2 = -1.6a t p = 25 k - 3.0 0.7 k sbp1300-o 2/5 ? notes : 1. h fe sorting : r-grade(18~26), o-grade(24~32), y-grade(30~40) 2. pulse test : pulse width ? 300 k , duty cycle ? 2%
SBP13009-O 3/5 fig 1. saturation voltage fig 2. dc current gain fig 3. swiching time fig 4. power derating fig 5. safe operation area fig 6. collect output capacitance
i b1 v be (o ff) r bb i b i c v clamp v cc v ce d.u.t l c f i b1 v be (o ff) r bb i b i c v cc v ce d.u.t r c SBP13009-O 4/5 inductive load switching & rbsoa test circuit resistive load switching test circuit
dim. mm inch min. typ. max. min. typ. max. a 9.7 10.1 0.382 0.398 b 6.3 6.7 0.248 0.264 c 9.0 9.47 0.354 0.373 d 12.8 13.3 0.504 0.524 e 1.2 1.4 0.047 0.055 f 1.7 0.067 g 2.5 0.098 h 3.0 3.4 0.118 0.134 i 1.25 1.4 0.049 0.055 j 2.4 2.7 0.094 0.106 k 5.0 5.15 0.197 0.203 l 2.2 2.6 0.087 0.102 m 1.25 1.55 0.049 0.061 n 0.45 0.6 0.018 0.024 o 0.6 1.0 0.024 0.039 3.6 0.142 5/5 to-220 package dimension 1. base 2. collector 3. emitter a b c i g l 1 m e f h k n o 2 3 j d c1.0 SBP13009-O
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